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Model NAND01GW3A0AN6E
Description 128Mega, 256 Mega, 512 Mega, 1 Gigabit (X8/X16), 528 bytes/word, 264 pages, 1.8V/3V, NAND flash 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
Product QR code
Brand: ST Microelectronics
Packaging TSOP-48
Delivery time
Packaging method Tray
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3145) Minimum order quantity(1)
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Technical parameters/power supply voltage (DC):

3.30 V, 3.60 V (max)

 

Technical parameters/memory capacity:

1000000000 B

 

Technical parameters/power supply voltage:

2.7V ~ 3.6V

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TSOP-48

 

Dimensions/Packaging:

TSOP-48

 

Physical parameters/operating temperature:

-40℃ ~ 85℃ (TA)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tray

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NAND01GW3B2BN6E NAND01GW3B2BN6E Micron 完全替代 TSOP
1千兆， 2千兆， 2112字节/ 1056字页， 1.8V / 3V ， NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PDF
NAND01GW3B2BN6E NAND01GW3B2BN6E Numonyx 完全替代 TSOP
1千兆， 2千兆， 2112字节/ 1056字页， 1.8V / 3V ， NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PDF
NAND01GW3B2CN6F NAND01GW3B2CN6F ST Microelectronics 功能相似 TSOP1
1千兆， 2千兆， 2112字节/ 1056字页， 1.8V / 3V ， NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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