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Model MTP3055VL

Description The enhanced mode N-channel MOSFET, Fairchild Semiconductor's enhanced mode field-effect transistor (FET), is produced using Fairchild's patented high-density DMOS technology. This high-density process design is used to minimize on state resistance, provide durable and reliable performance, and enable fast switching. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (<250V) types. Advanced silicon technology provides smaller chip sizes, which are integrated into various industrial standards and heat-resistant enhanced packages. Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot, reducing junction capacitance and reverse recovery charge, and maintaining system startup and operation for longer periods of time without the need for additional external components.

Brand: ON Semiconductor

Packaging TO-220-3

Delivery time

Packaging method Rail, Tube

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(8743) Minimum order quantity(1)

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Technical parameters/rated voltage (DC):	60.0 V
Technical parameters/rated current:	12.0 A
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.1 Ω
Technical parameters/dissipated power:	48 W
Technical parameters/threshold voltage:	1.6 V
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/Continuous drain current (Ids):	12.0 A
Technical parameters/rise time:	190 ns
Technical parameters/Input capacitance (Ciss):	570pF @25V(Vds)
Technical parameters/rated power (Max):	48 W
Technical parameters/descent time:	90 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	48W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	10.67 mm
Dimensions/Width:	4.83 mm
Dimensions/Height:	16.51 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Rail, Tube
Other/Manufacturing Applications:	Motor drive and control, power management
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Contains Lead

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MTP3055VL	ON Semiconductor	功能相似	TO-220-3	FAIRCHILD SEMICONDUCTOR MTP3055VL 晶体管, MOSFET, N沟道, 12 A, 60 V, 0.1 ohm, 5 V, 1.6 V	PDF
RFP3055LE	ON Semiconductor	功能相似	TO-220	11A ， 60V ， 0.107欧姆，逻辑电平， N沟道功率MOSFET 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs	PDF