Technical parameters/rated voltage (DC): | 60.0 V |
|
Technical parameters/rated current: | 12.0 A |
|
Technical parameters/dissipated power: | 48W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 60 V |
|
Technical parameters/Continuous drain current (Ids): | 12.0 A |
|
Technical parameters/rise time: | 34 ns |
|
Technical parameters/Input capacitance (Ciss): | 500pF @25V(Vds) |
|
Technical parameters/descent time: | 18 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 48W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Packaging: | TO-220-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Rail |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MTP3055V
|
ON Semiconductor | 功能相似 | TO-220-3 |
N沟道增强型网络场效晶体管 N-Channel Enhancement Mode Field Effect Transistor
|
||
MTP3055VL
|
ON Semiconductor | 类似代替 | TO-220-3 |
增强模式 N 通道 MOSFET， Fairchild Semiconductor 增强模式场效应晶体管 (FET) 使用了 Fairchild 的专利高单元密度的 DMOS 技术进行生产。 这种高密度工艺设计用于尽量减小通态电阻，提供耐用可靠的性能和快速切换。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (<250V) 类型。 先进的硅技术提供更小的芯片尺寸，其整合到多种工业标准和耐热增强型封装中。 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
|
||
|
|
ON Semiconductor | 功能相似 | TO-220 |
11A ， 60V ， 0.107欧姆，逻辑电平， N沟道功率MOSFET 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review