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Model MTB50P03HDL

Description Power MOSFET 50 Amps, 30 volts, Logic Level P-channel D2PAK Power MOSFET 50 Amps, 30 volts, Logic Level P-Channel D2PAK

Brand: ON Semiconductor

Packaging D2PAK-263

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	-30.0 V
Technical parameters/rated current:	-50.0 A
Technical parameters/drain source resistance:	25.0 mΩ
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	125 W
Technical parameters/Input capacitance:	3.50 nF
Technical parameters/gate charge:	100 nC
Technical parameters/drain source voltage (Vds):	30.0 V
Technical parameters/Leakage source breakdown voltage:	30.0 V
Technical parameters/breakdown voltage of gate source:	±15.0 V
Technical parameters/Continuous drain current (Ids):	50.0 A
Technical parameters/rise time:	340 ns
Technical parameters/Input capacitance (Ciss):	3500pF @25V(Vds)
Technical parameters/descent time:	218 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	125000 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	D2PAK-263
Dimensions/Packaging:	D2PAK-263
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Contains Lead
Customs information/ECCN code:	EAR99

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MTB50P03HDLT4G	ON Semiconductor	类似代替	TO-263-3	ON SEMICONDUCTOR MTB50P03HDLT4G. 场效应管, MOSFET, P沟道, -30V, 50A, D2-PAK	PDF