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Specification parameters
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Technical parameters/rated voltage (DC):

-30.0 V

Technical parameters/rated current:

-50.0 A

Technical parameters/number of pins:

Technical parameters/drain source resistance:

0.025 Ω

Technical parameters/polarity:

P-Channel

Technical parameters/dissipated power:

125 W

Technical parameters/threshold voltage:

1.5 V

Technical parameters/drain source voltage (Vds):

30 V

Technical parameters/Leakage source breakdown voltage:

30.0 V

Technical parameters/breakdown voltage of gate source:

±15.0 V

Technical parameters/Continuous drain current (Ids):

50.0 A

Technical parameters/rise time:

340 ns

Technical parameters/Input capacitance (Ciss):

4900pF @25V(Vds)

Technical parameters/rated power (Max):

2.5 W

Technical parameters/descent time:

218 ns

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

2.5W (Ta), 125W (Tc)

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

TO-263-3

Dimensions/Length:

10.29 mm

Dimensions/Width:

9.65 mm

Dimensions/Height:

4.83 mm

Dimensions/Packaging:

TO-263-3

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tape & Reel (TR)

Compliant with standards/RoHS standards:

RoHS Compliant

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
MTB50P03HDL	ON Semiconductor	类似代替	D2PAK-263	功率MOSFET 50安培， 30伏特，逻辑电平P沟道D2PAK Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK	PDF
MTB50P03HDLG	ON Semiconductor	类似代替	TO-263-3	-50A,-30V,P沟道功率MOSFET	PDF
MTB50P03HDLT4	ON Semiconductor	类似代替	TO-263-3	功率MOSFET 50安培， 30伏特，逻辑电平P沟道D2PAK Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK	PDF

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Tel: +86-0755-82866643