Technical parameters/dissipated power: | 400000 mW |
|
Technical parameters/gain: | 8 dB |
|
Technical parameters/operating temperature (Max): | 250 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 400000 mW |
|
Encapsulation parameters/installation method: | Chassis |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | M218 |
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Dimensions/Height: | 5.84 mm |
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Dimensions/Packaging: | M218 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AVD150
|
Advanced Semiconductor | 功能相似 |
RF Power Bipolar Transistor, 1Element, L Band, Silicon, NPN
|
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|
|
Microsemi | 功能相似 | M214 |
Trans RF BJT NPN 60V 20A 4Pin Case M214
|
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