Technical parameters/dissipated power: | 575000 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 60 V |
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Technical parameters/gain: | 8dB ~ 8.7dB |
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Technical parameters/minimum current amplification factor (hFE): | 10 @1A, 5V |
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Technical parameters/rated power (Max): | 575 W |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 575000 mW |
|
Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | M214 |
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Dimensions/Height: | 5.84 mm |
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Dimensions/Packaging: | M214 |
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Physical parameters/operating temperature: | 250℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AVD150
|
Advanced Semiconductor | 功能相似 |
RF Power Bipolar Transistor, 1Element, L Band, Silicon, NPN
|
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|
|
Microsemi | 功能相似 | M218 |
Trans RF BJT NPN 65V 0.013A 3Pin Case M218
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