Technical parameters/dissipated power: | 200 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 15 V |
|
Technical parameters/gain: | 6.5dB ~ 10.5dB |
|
Technical parameters/minimum current amplification factor (hFE): | 30 @5mA, 5V |
|
Technical parameters/rated power (Max): | 200 mW |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 200 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | TO-72 |
|
Dimensions/Packaging: | TO-72 |
|
Physical parameters/operating temperature: | 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC5088
|
Toshiba | 功能相似 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOESE AMPLIFIER APPLICATIONS)
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|||
BFP405
|
Infineon | 功能相似 | SOT-343 |
INFINEON BFP405 晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 55 mW, 12 mA, 95 hFE
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||
MRF904
|
Microsemi | 功能相似 | TO-72 |
射频与微波离散小功率三极管 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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||
MRF904
|
Advanced Semiconductor | 功能相似 | TO-72 |
射频与微波离散小功率三极管 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
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