Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/Maximum allowable collector current: | 10000mA |
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Technical parameters/minimum current amplification factor (hFE): | 20 |
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Technical parameters/maximum current amplification factor (hFE): | 100 |
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Encapsulation parameters/Encapsulation: | TO-252-2 |
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Dimensions/Packaging: | TO-252-2 |
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Other/Minimum Packaging: | 80 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSH3055
|
Fairchild | 功能相似 | DPAK |
Power Bipolar Transistor
|
||
MJD3055
|
CJ | 功能相似 | TO-252-2 |
互补功率晶体管 COMPLEMENTARY POWER TRANSISTORS
|
||
MJD3055
|
Fairchild | 功能相似 | TO-252 |
互补功率晶体管 COMPLEMENTARY POWER TRANSISTORS
|
||
MJD3055T4
|
ON Semiconductor | 功能相似 | TO-252-3 |
STMICROELECTRONICS MJD3055T4 单晶体管 双极, NPN, 60 V, 20 W, 10 A, 5 hFE
|
||
MJD3055T4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS MJD3055T4 单晶体管 双极, NPN, 60 V, 20 W, 10 A, 5 hFE
|
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