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Model CSD87351Q5D
Description Synchronous voltage reduction NexFET ™ Power block
Product QR code
Brand: TI
Packaging PowerLDFN-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
10.16  yuan 10.16yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8359) Minimum order quantity(1)
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Technical parameters/drain source resistance:

0.0074 Ω

 

Technical parameters/polarity:

Dual N-Channel

 

Technical parameters/dissipated power:

12 W

 

Technical parameters/threshold voltage:

2.1 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Input capacitance (Ciss):

1255pF @15V(Vds)

 

Technical parameters/rated power (Max):

12 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

12000 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

PowerLDFN-8

 

Dimensions/Height:

1.55 mm

 

Dimensions/Packaging:

PowerLDFN-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Supply in progress

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with standard/REACH SVHC version:

2015/06/15

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
CSD86330Q3D CSD86330Q3D TI 功能相似 LDFN-8
同步降压 NexFET™ 电源块 MOSFET 对
CSD87330Q3D CSD87330Q3D TI 功能相似 LSON-CLIP-8
30V 同步降压 NexFET™ 电源块

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