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Description IRF1404 Series 40 V 162 A Ultra Low On Resistance HEXFET ® Power MOSFET-D ² - Pak
Product QR code
Brand: Infineon
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.27  yuan 7.27yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(9362) Minimum order quantity(1)
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Technical parameters/rated power:

200 W

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.0035 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

3.8 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/Input capacitance:

7360 pF

 

Technical parameters/drain source voltage (Vds):

40 V

 

Technical parameters/Continuous drain current (Ids):

162A

 

Technical parameters/rise time:

140 ns

 

Technical parameters/Input capacitance (Ciss):

7360pF @25V(Vds)

 

Technical parameters/rated power (Max):

3.8 W

 

Technical parameters/descent time:

26 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

3.8W (Ta), 200W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Length:

10.67 mm

 

Dimensions/Width:

11.3 mm

 

Dimensions/Height:

4.83 mm

 

Dimensions/Packaging:

TO-263-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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