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Model AUIRF3205Z
Description N Channel power MOSFET, Infineon Infineon's comprehensive AECQ-101 automotive qualification single-chip N-channel device combination can meet various power requirements in many applications. The discrete HEXFET ® The power MOSFET series includes surface mount and lead packaged N-channel devices, with a form factor that can handle almost any board layout and thermal design challenge. Throughout the entire range, the reference on resistance reduces conduction losses, allowing designers to provide optimal system efficiency. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging TO-220-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
13.21  yuan 13.21yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7888) Minimum order quantity(1)
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Technical parameters/rated power:

170 W

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.0049 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

170 W

 

Technical parameters/threshold voltage:

2 V

 

Technical parameters/drain source voltage (Vds):

55 V

 

Technical parameters/Continuous drain current (Ids):

110A

 

Technical parameters/rise time:

95 ns

 

Technical parameters/Input capacitance (Ciss):

3450pF @25V(Vds)

 

Technical parameters/descent time:

67 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

170W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10.67 mm

 

Dimensions/Width:

4.83 mm

 

Dimensions/Height:

16.51 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Rail, Tube

 

Other/Manufacturing Applications:

Electric Power Steering, Motor Drive&Control, Automotive, Power Management, Automotive, Motor Drive& Control, Power management, Brushed Motor Drive, Brushless Motor Drive

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

lead-free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
AUIRF3205 AUIRF3205 Infineon 类似代替 TO-220-3
INFINEON AUIRF3205 晶体管, MOSFET, N沟道, 75 A, 55 V, 0.008 ohm, 10 V, 2 V
PDF
AUIRF3205 AUIRF3205 International Rectifier 类似代替 TO-220-3
INFINEON AUIRF3205 晶体管, MOSFET, N沟道, 75 A, 55 V, 0.008 ohm, 10 V, 2 V
PDF
IRF3205PBF IRF3205PBF IFC 类似代替
N 通道功率 MOSFET 超过 100A，Infineon ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
IRF3205PBF IRF3205PBF Infineon 类似代替 TO-220-3
N 通道功率 MOSFET 超过 100A，Infineon ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
IRF3205ZPBF IRF3205ZPBF IFC 类似代替
INFINEON IRF3205ZPBF 晶体管, MOSFET, 汽车, N沟道, 110 A, 55 V, 6.5 mohm, 10 V, 4 V

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