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Specification parameters
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Technical parameters/rated power:

150 W

Technical parameters/number of pins:

Technical parameters/drain source resistance:

0.008 Ω

Technical parameters/polarity:

N-CH

Technical parameters/dissipated power:

150 W

Technical parameters/threshold voltage:

4 V

Technical parameters/Input capacitance:

3247 pF

Technical parameters/drain source voltage (Vds):

55 V

Technical parameters/Leakage source breakdown voltage:

55 V

Technical parameters/Continuous drain current (Ids):

110A

Technical parameters/rise time:

101 ns

Technical parameters/Input capacitance (Ciss):

3247pF @25V(Vds)

Technical parameters/rated power (Max):

200 W

Technical parameters/descent time:

65 ns

Technical parameters/operating temperature (Max):

175 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

200000 mW

Encapsulation parameters/installation method:

Through Hole

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

TO-220-3

Dimensions/Length:

10.67 mm

Dimensions/Width:

4.69 mm

Dimensions/Height:

8.77 mm

Dimensions/Packaging:

TO-220-3

Physical parameters/materials:

Silicon

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tube

Other/Manufacturing Applications:

Consumer Full-Bridge, Push-Pull, Commercial, Commercial, Industrial, Power Management, Power Mana

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	AUIRF3205Z	Infineon	类似代替	TO-220-3	N 通道功率 MOSFET，Infineon Infineon 的全面 AECQ-101 汽车资格单芯片 N 通道设备组合可满足许多应用中的多种电源要求。该分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。	PDF
	IRF3205ZPBF	IFC	类似代替		INFINEON IRF3205ZPBF 晶体管, MOSFET, 汽车, N沟道, 110 A, 55 V, 6.5 mohm, 10 V, 4 V

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643