Technical parameters/dissipated power: | 200 mW |
|
Technical parameters/minimum current amplification factor (hFE): | 200 |
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Technical parameters/DC current gain (hFE): | 200 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SC-88 |
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Dimensions/Packaging: | SC-88 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standard/REACH SVHC version: | 2014/12/17 |
|
Customs Information/Hong Kong Import and Export License: | NLR |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847BVN
|
NXP | 类似代替 | SOT-666 |
NXP BC847BVN 双极晶体管阵列, 通用, NPN, PNP, 45 V, 200 mW, 100 mA, 200 hFE, SOT-666
|
||
BC847BVN
|
Philips | 类似代替 | SOT-666 |
NXP BC847BVN 双极晶体管阵列, 通用, NPN, PNP, 45 V, 200 mW, 100 mA, 200 hFE, SOT-666
|
||
BC847BVN,115
|
NXP | 类似代替 | SOT-666 |
NXP BC847BVN,115 双极晶体管阵列, NPN, PNP, 45 V, 200 mW, 100 mA, 200 hFE, SOT-666
|
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