Technical parameters/frequency: 100 MHz
Technical parameters/number of pins: 6
Technical parameters/polarity: NPN, PNP
Technical parameters/dissipated power: 200 mW
Technical parameters/gain bandwidth product: 100 MHz
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 200 @2mA, 5V
Technical parameters/rated power (Max): 300 mW
Technical parameters/DC current gain (hFE): 200
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-666
External dimensions/length: 1.7 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.6 mm
External dimensions/packaging: SOT-666
Physical parameters/weight: 0.004535924 kg
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847BVN
|
NXP | 类似代替 | SOT-666 |
NXP BC847BVN 双极晶体管阵列, 通用, NPN, PNP, 45 V, 200 mW, 100 mA, 200 hFE, SOT-666
|
||
BC847BVN
|
Philips | 类似代替 | SOT-666 |
NXP BC847BVN 双极晶体管阵列, 通用, NPN, PNP, 45 V, 200 mW, 100 mA, 200 hFE, SOT-666
|
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