Technical parameters/power supply voltage (DC): | 5.00 V |
|
Technical parameters/power supply current: | 50 mA |
|
Technical parameters/clock frequency: | 85.0 GHz |
|
Technical parameters/access time: | 85.0 ns |
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Technical parameters/memory capacity: | 1000000 B |
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Technical parameters/access time (Max): | 85 ns |
|
Technical parameters/operating temperature (Max): | 70 ℃ |
|
Technical parameters/operating temperature (Min): | 0 ℃ |
|
Technical parameters/power supply voltage: | 4.5V ~ 5.5V |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 32 |
|
Encapsulation parameters/Encapsulation: | DIP-32 |
|
Dimensions/Packaging: | DIP-32 |
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Physical parameters/operating temperature: | 0℃ ~ 70℃ (TA) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1245Y-85+
|
Maxim Integrated | 功能相似 | DIP-32 |
MAXIM INTEGRATED PRODUCTS DS1245Y-85+ 芯片, 存储器, NVRAM
|
||
M48Z128Y-85PM1
|
ST Microelectronics | 功能相似 | DIP-32 |
5.0 V或3.3 V , 1兆位( 128千位×8 ) ZEROPOWER ? SRAM 5.0 V or 3.3 V, 1 Mbit (128 Kbit x 8) ZEROPOWER? SRAM
|
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