Technical parameters/power supply voltage (DC): | 5.00 V, 5.50 V (max) |
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Technical parameters/clock frequency: | 85.0 GHz |
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Technical parameters/access time: | 85.0 ns |
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Technical parameters/memory capacity: | 1000000 B |
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Technical parameters/access time (Max): | 85 ns |
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Technical parameters/operating temperature (Max): | 70 ℃ |
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Technical parameters/operating temperature (Min): | 0 ℃ |
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Technical parameters/power supply voltage: | 4.5V ~ 5.5V |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 32 |
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Encapsulation parameters/Encapsulation: | DIP-32 |
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Dimensions/Packaging: | DIP-32 |
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Physical parameters/operating temperature: | 0℃ ~ 70℃ (TA) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BQ4013YMA-85
|
TI | 功能相似 | DIP-32 |
128Kx8非易失SRAM 128Kx8 Nonvolatile SRAM
|
||
DS1245Y-85+
|
Maxim Integrated | 功能相似 | DIP-32 |
MAXIM INTEGRATED PRODUCTS DS1245Y-85+ 芯片, 存储器, NVRAM
|
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