Technical parameters/power supply voltage (DC): | 5.00 V, 5.50 V (max) |
|
Technical parameters/power supply current: | 105 mA |
|
Technical parameters/clock frequency: | 70.0 GHz |
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Technical parameters/access time: | 70 ns |
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Technical parameters/memory capacity: | 125000 B |
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Technical parameters/access time (Max): | 70 ns |
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Technical parameters/operating temperature (Max): | 70 ℃ |
|
Technical parameters/operating temperature (Min): | 0 ℃ |
|
Technical parameters/power supply voltage: | 4.75V ~ 5.5V |
|
Technical parameters/power supply voltage (Max): | 5.5 V |
|
Technical parameters/power supply voltage (Min): | 4.75 V |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 32 |
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Encapsulation parameters/Encapsulation: | DIP-32 |
|
Dimensions/Length: | 43.18 mm |
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Dimensions/Width: | 18.8 mm |
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Dimensions/Height: | 9.52 mm |
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Dimensions/Packaging: | DIP-32 |
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Physical parameters/operating temperature: | 0℃ ~ 70℃ (TA) |
|
Other/Product Lifecycle: | Not Recommended for New Designs |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1245Y-70+
|
Dallas Semiconductor | 功能相似 | DIP |
MAXIM INTEGRATED PRODUCTS DS1245Y-70+ 芯片, 存储器, NVSRAM, 1024KB, 128KX8, 32EDIP
|
||
DS1245Y-70IND+
|
Maxim Integrated | 功能相似 | EDIP-32 |
MAXIM INTEGRATED PRODUCTS DS1245Y-70IND+ 芯片, 存储器, NVRAM
|
||
M48Z128-70PM1
|
ST Microelectronics | 类似代替 | DIP-32 |
1兆位128KB X8 ZEROPOWER SRAM 1 Mbit 128Kb x8 ZEROPOWER SRAM
|
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