Technical parameters/power supply voltage (DC): | 5.00 V, 5.50 V (max) |
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Technical parameters/number of pins: | 28 |
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Technical parameters/clock frequency: | 70.0 GHz |
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Technical parameters/dissipated power: | 1000 mW |
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Technical parameters/access time: | 70.0 ns |
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Technical parameters/memory capacity: | 64000 B |
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Technical parameters/access time (Max): | 70 ns |
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Technical parameters/operating temperature (Max): | 70 ℃ |
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Technical parameters/operating temperature (Min): | 0 ℃ |
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Technical parameters/dissipated power (Max): | 1000 mW |
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Technical parameters/power supply voltage: | 4.5V ~ 5.5V |
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Technical parameters/power supply voltage (Max): | 5.5 V |
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Technical parameters/power supply voltage (Min): | 4.5 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 28 |
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Encapsulation parameters/Encapsulation: | SOIC-28 |
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Dimensions/Packaging: | SOIC-28 |
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Physical parameters/operating temperature: | 0℃ ~ 70℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Altera | 类似代替 |
TIMEKEEPER® SRAM,STMicroelectronics 计时器将 SRAM 与高达 256 K 字节的存储器和字节宽接口以及基于石英的极低功率振荡器结合,带时钟/日历电路,可提供实时数据。 封装嵌入电池和晶体。 ### 实时时钟 (RTC)
|
|||
M48T08-150PC1
|
ST Microelectronics | 类似代替 | DIP-28 |
TIMEKEEPER® SRAM,STMicroelectronics 计时器将 SRAM 与高达 256 K 字节的存储器和字节宽接口以及基于石英的极低功率振荡器结合,带时钟/日历电路,可提供实时数据。 封装嵌入电池和晶体。 ### 实时时钟 (RTC)
|
||
M48T18-100PC1
|
ST Microelectronics | 类似代替 | DIP-28 |
STMICROELECTRONICS M48T18-100PC1 芯片, SRAM, TIMEKEEPER? 64K
|
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