Technical parameters/power supply voltage (DC): 5.00 V, 5.50 V (max)
Technical parameters/working voltage: 4.5V ~ 5.5V
Technical parameters/number of pins: 28
Technical parameters/clock frequency: 100 GHz
Technical parameters/dissipated power: 1000 mW
Technical parameters/access time: 100 ns
Technical parameters/memory capacity: 8000 B
Technical parameters/access time (Max): 100 ns
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/dissipated power (Max): 1000 mW
Technical parameters/power supply voltage: 4.5V ~ 5.5V
Technical parameters/power supply voltage (Max): 5.5 V
Technical parameters/power supply voltage (Min): 4.5 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 28
Encapsulation parameters/Encapsulation: DIP-28
External dimensions/length: 39.88 mm
External dimensions/width: 18.34 mm
External dimensions/height: 8.89 mm
External dimensions/packaging: DIP-28
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Communications & Networking, Communication and Network, Security, Security
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Altera | 类似代替 |
TIMEKEEPER® SRAM，STMicroelectronics 计时器将 SRAM 与高达 256 K 字节的存储器和字节宽接口以及基于石英的极低功率振荡器结合，带时钟/日历电路，可提供实时数据。 封装嵌入电池和晶体。 ### 实时时钟 (RTC)
|
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M48T08-150PC1
|
ST Microelectronics | 类似代替 | DIP-28 |
TIMEKEEPER® SRAM，STMicroelectronics 计时器将 SRAM 与高达 256 K 字节的存储器和字节宽接口以及基于石英的极低功率振荡器结合，带时钟/日历电路，可提供实时数据。 封装嵌入电池和晶体。 ### 实时时钟 (RTC)
|
||
M48T18-150PC1
|
ST Microelectronics | 类似代替 | DIP-28 |
STMICROELECTRONICS M48T18-150PC1 芯片, SRAM, 实时时钟, 非易失性, 64K
|
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