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Model IPD70P04P4-09

Description 的OptiMOS -P2功率三极管 OptiMOS-P2 Power-Transistor

Brand: Infineon

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	8.9 mΩ
Technical parameters/polarity:	P-CH
Technical parameters/drain source voltage (Vds):	40 V
Technical parameters/Continuous drain current (Ids):	73A
Technical parameters/rise time:	12 ns
Technical parameters/Input capacitance (Ciss):	3700pF @25V(Vds)
Technical parameters/descent time:	31 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	75000 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Length:	6.5 mm
Dimensions/Width:	6.22 mm
Dimensions/Height:	2.3 mm
Dimensions/Packaging:	TO-252-3
Physical parameters/operating temperature:	-55℃ ~ 175℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump, High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	IPB70P04P4-09	Infineon	类似代替	TO-252-3	Infineon OptiMOS™P P 通道功率 MOSFET Infineon OptiMOS™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。应用包括：直流-直流、电动机控制、汽车和 eMobility。增强型模式雪崩等级低切换和传导功率损耗无铅引线电镀；符合 RoHS 标准标准封装 OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。这些产品提供最新一代最先进功率 MOSFET 中的顶级性能