IPB70P04P4-09 In Stock|PDF|Datasheet|Price|Agent[IPB70P04P4-09 Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Warm reminder: The pictures are for reference only. The actual product may vary

Model IPB70P04P4-09

Description Infineon OptiMOS™P P 通道功率 MOSFET **Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。应用包括：直流-直流、电动机控制、汽车和 eMobility。增强型模式雪崩等级低切换和传导功率损耗无铅引线电镀；符合 RoHS 标准标准封装 OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。这些产品提供最新一代最先进功率 MOSFET 中的顶级性能

Brand: Infineon

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

10+:

$ 6.7920

100+:

$ 6.4524

500+:

$ 6.2260

1000+:

$ 6.2147

2000+:

$ 6.1694

5000+:

$ 6.1128

7500+:

$ 6.0675

10000+:

$ 6.0449

Price	$ 6.7920	$ 6.4524	$ 6.2260	$ 6.2147	$ 6.1694
Start batch production	10+	100+	500+	1000+	2000+

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(4406) Minimum order quantity(10)

Add to Cart Buy now

Welcome to use ICGOODFIND AI Assistant

Chip AI consultant

Download related files

Specification parameters
PDF
Silk screen printing
Review and share the purchase （0 ）
Product inquiry (0)
Selection Manual
Adapter model (0)

Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	9.1 mΩ
Technical parameters/polarity:	P-CH
Technical parameters/dissipated power:	75 W
Technical parameters/drain source voltage (Vds):	40 V
Technical parameters/Continuous drain current (Ids):	72A
Technical parameters/rise time:	15 ns
Technical parameters/descent time:	31 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	75 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Length:	10 mm
Dimensions/Width:	9.25 mm
Dimensions/Height:	4.4 mm
Dimensions/Packaging:	TO-252-3
Physical parameters/operating temperature:	-55℃ ~ 175℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump, High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free