Technical parameters/rated voltage (DC): | 75.0 V |
|
Technical parameters/rated current: | 75.0 A |
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Technical parameters/drain source resistance: | 7.50 MΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 170 W |
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Technical parameters/product series: | IRF2807ZS |
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Technical parameters/drain source voltage (Vds): | 75.0 V |
|
Technical parameters/Leakage source breakdown voltage: | 75.0V (min) |
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Technical parameters/Continuous drain current (Ids): | 75.0 A |
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Technical parameters/rise time: | 79.0 ns |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-263 |
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Dimensions/Packaging: | TO-263 |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF2807ZSPBF
|
International Rectifier | 类似代替 | TO-263-3 |
INFINEON IRF2807ZSPBF 晶体管, MOSFET, N沟道, 89 A, 75 V, 9.4 mohm, 10 V, 4 V
|
||
IRF2807ZSTRLPBF
|
IFC | 类似代替 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
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