Technical parameters/rated voltage (DC): 75.0 V
Technical parameters/rated current: 75.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 170 W
Technical parameters/product series: IRF2807ZS
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 75.0 A
Technical parameters/rise time: 79.0 ns
Technical parameters/Input capacitance (Ciss): 3270pF @25V(Vds)
Technical parameters/rated power (Max): 170 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB140NF75T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STB140NF75 系列 N 沟道 75 V 0.0075 Ω 160 nC STripFET™II MosFet - D2PAK
|
||
STB60N55F3
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™ F3,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics
|
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