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Technical parameters/frequency: | 200 MHz |
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Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 0.25 W |
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Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/Maximum allowable collector current: | 0.6A |
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Technical parameters/minimum current amplification factor (hFE): | 20 |
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Technical parameters/DC current gain (hFE): | 100 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 0.25 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-236 |
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Dimensions/Length: | 3 mm |
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Dimensions/Width: | 1.4 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | TO-236 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | PB free |
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Compliant with standard/REACH SVHC version: | 2014/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT4403LT1G
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ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT4403LT1G 单晶体管 双极, 通用, PNP, -40 V, 200 MHz, 300 mW, -600 mA, 200 hFE
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