Technical parameters/rated voltage (DC): | 35.0 V |
|
Technical parameters/rated current: | 20.0 mA |
|
Technical parameters/breakdown voltage: | -35.0 V|35 V |
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Technical parameters/drain source resistance: | 30 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 350 mW |
|
Technical parameters/drain source voltage (Vds): | 35.0 V |
|
Technical parameters/breakdown voltage of gate source: | 35 V |
|
Technical parameters/Continuous drain current (Ids): | 20.0 mA |
|
Technical parameters/rated power (Max): | 350 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 2.9 mm |
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Dimensions/Width: | 1.3 mm |
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Dimensions/Height: | 1.04 mm |
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Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Industrial, Power Management |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/06/15 |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMBFJ111,215
|
NXP | 功能相似 | SOT-23-3 |
PMBFJ111,215 N通道 JFET 晶体管 40 V, 3引脚 TO-236AB封装 min. 20mA
|
||
SST111
|
Calogic | 类似代替 | SOT-23 |
JFET 55V 20mA
|
||
|
|
Vishay Siliconix | 类似代替 | SOT-23 |
JFET 55V 20mA
|
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