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Model FQA65N20
Description QFET® N 通道 MOSFET，超过 31A，Fairchild Semiconductor Fairchild Semiconductor 的新型 QFET® 平面 MOSFET 使用先进的专利技术为广泛的应用提供最佳的工作性能，包括电源、PFC（功率因数校正）、直流－直流转换器、等离子显示面板 (PDP)、照明镇流器和运动控制。 它们通过降低导通电阻 (RDS(on)) 来减少通态损耗，并通过降低栅极电荷 (Qg) 和输出电容 (Coss) 来减少切换损耗。 通过使用先进的 QFET® 工艺技术，Fairchild 可提供比竞争平面 MOSFET 设备更高的品质因素 (FOM)。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
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Brand: Fairchild
Packaging TO-3-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
7.26  yuan 7.26yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8896) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

200 V

 

Technical parameters/rated current:

65.0 A

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

32 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

310 W

 

Technical parameters/threshold voltage:

5 V

 

Technical parameters/drain source voltage (Vds):

200 V

 

Technical parameters/Leakage source breakdown voltage:

200 V

 

Technical parameters/breakdown voltage of gate source:

±30.0 V

 

Technical parameters/Continuous drain current (Ids):

65.0 A

 

Technical parameters/rise time:

640 ns

 

Technical parameters/Input capacitance (Ciss):

7900pF @25V(Vds)

 

Technical parameters/rated power (Max):

310 W

 

Technical parameters/descent time:

275 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/working junction temperature (Max):

150 ℃

 

Technical parameters/dissipated power (Max):

310 W

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-3-3

 

Dimensions/Length:

15.8 mm

 

Dimensions/Width:

5 mm

 

Dimensions/Height:

18.9 mm

 

Dimensions/Packaging:

TO-3-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturin

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STD18N55M5 STD18N55M5 ST Microelectronics 功能相似 TO-252-3
STMICROELECTRONICS STD18N55M5 晶体管, MOSFET, N沟道, 13 A, 550 V, 0.18 ohm, 10 V, 4 V
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