Technical parameters/number of pins: | 6 |
|
Technical parameters/drain source resistance: | 0.3 Ω |
|
Technical parameters/dissipated power: | 300 mW |
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Technical parameters/threshold voltage: | 1.2 V |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/rise time: | 14 ns |
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Technical parameters/Input capacitance (Ciss): | 114pF @10V(Vds) |
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Technical parameters/rated power (Max): | 300 mW |
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Technical parameters/descent time: | 1.7 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 300 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SC-70-6 |
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Dimensions/Length: | 2 mm |
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Dimensions/Width: | 1.25 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SC-70-6 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Industrial, power management |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1967DH-T1-GE3
|
Vishay Semiconductor | 功能相似 | SC-70-6 |
双P通道20 V（D -S）的MOSFET Dual P-Channel 20 V (D-S) MOSFET
|
||
SI1967DH-T1-GE3
|
Vishay Siliconix | 功能相似 | SC-70-6 |
双P通道20 V（D -S）的MOSFET Dual P-Channel 20 V (D-S) MOSFET
|
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