Technical parameters/number of pins: | 6 |
|
Technical parameters/drain source resistance: | 0.64 Ω |
|
Technical parameters/polarity: | Dual P-Channel |
|
Technical parameters/dissipated power: | 1.25 W |
|
Technical parameters/rise time: | 27 ns |
|
Technical parameters/descent time: | 10 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 1.25 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SC-70-6 |
|
Dimensions/Length: | 2.2 mm |
|
Dimensions/Width: | 1.35 mm |
|
Dimensions/Height: | 1 mm |
|
Dimensions/Packaging: | SC-70-6 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Industrial, Power Management, Portable Devices |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/06/15 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMGD290XN,115
|
Nexperia | 功能相似 | SC-70-6 |
双 N 通道 MOSFET，Nexperia ### MOSFET 晶体管，NXP Semiconductors
|
||
SI1903DL-T1-E3
|
VISHAY | 功能相似 | TSSOP-6 |
VISHAY SI1903DL-T1-E3 双路场效应管, MOSFET, 双路, 双P沟道, 410 mA, -20 V, 995 mohm, -4.5 V, -1.5 V
|
||
SI1913DH-T1-E3
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH DUAL 20V SC70-6
|
|||
SI1913DH-T1-E3
|
Vishay Intertechnology | 类似代替 | SOT-363-6 |
MOSFET P-CH DUAL 20V SC70-6
|
||
SI1913EDH-T1-E3
|
Vishay Semiconductor | 类似代替 | SOT-363 |
MOSFET P-CH DUAL 20V SC70-6
|
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