Technical parameters/drain source resistance: 490 mΩ
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 740 mW
Technical parameters/drain source voltage (Vds): -20.0 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): -1.00 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363
External dimensions/packaging: SOT-363
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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