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Model 2SK2225
Description 硅N沟道MOS FET Silicon N Channel MOS FET
Product QR code
Brand: Renesas Electronics
Packaging TO-3
Delivery time
Packaging method Tube, Rail
Standard packaging quantity 1
6.98  yuan 6.98yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4580) Minimum order quantity(1)
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Technical parameters/dissipated power (Max):

50W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-3

 

Dimensions/Packaging:

TO-3

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube, Rail

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2SK222 2SK222 HITACHI 功能相似 TO-3
Power Field-Effect Transistor, 2A I(D), 1500V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PFM, 3 PIN
2SK2225-E 2SK2225-E Renesas Electronics 类似代替 TO-3-3
硅N沟道MOS FET Silicon N Channel MOS FET
PDF
SK22 SK22 Diotec Semiconductor 功能相似 DO-214AA
Power Field-Effect Transistor, 2A I(D), 1500V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PFM, 3 PIN
PDF
SK22 SK22 HITACHI 功能相似 TO-3
Power Field-Effect Transistor, 2A I(D), 1500V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PFM, 3 PIN
PDF
SK22 SK22 Taiwan Semiconductor 功能相似
Power Field-Effect Transistor, 2A I(D), 1500V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PFM, 3 PIN
PDF
SK22 SK22 Good-Ark Electronics 功能相似 DO-214AA
Power Field-Effect Transistor, 2A I(D), 1500V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PFM, 3 PIN
PDF

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