Technical parameters/dissipated power: | 50W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 1500 V |
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Technical parameters/rise time: | 50 ns |
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Technical parameters/Input capacitance (Ciss): | 984.7pF @30V(Vds) |
|
Technical parameters/rated power (Max): | 50 W |
|
Technical parameters/descent time: | 50 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 50W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-3-3 |
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Dimensions/Packaging: | TO-3-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
HITACHI | 功能相似 | TO-3 |
Power Field-Effect Transistor, 2A I(D), 1500V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PFM, 3 PIN
|
||
2SK2225
|
Renesas Electronics | 类似代替 | TO-3 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
||
2SK2225
|
HITACHI | 类似代替 | TO-3 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
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