Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 0.35 W |
|
Technical parameters/drain source voltage (Vds): | 50 V |
|
Technical parameters/Continuous drain current (Ids): | 0.22A |
|
Technical parameters/forward voltage (Max): | 1.4 V |
|
Technical parameters/Input capacitance (Ciss): | 27pF @25V(Vds) |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 350 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSS138
|
NCE | 功能相似 |
BSS138 N沟道MOSFET 50V 220mA/0.22A SOT-23/SC-59 marking/标记 SS 高速开关/无二次击穿
|
|||
|
|
Blue Rocket Electronics | 功能相似 | SOT-23 |
BSS138 N沟道MOSFET 50V 220mA/0.22A SOT-23/SC-59 marking/标记 SS 高速开关/无二次击穿
|
||
BSS138
|
Fairchild | 功能相似 | SOT-23-3 |
BSS138 N沟道MOSFET 50V 220mA/0.22A SOT-23/SC-59 marking/标记 SS 高速开关/无二次击穿
|
||
BSS138
|
ON Semiconductor | 功能相似 | SOT-23-3 |
BSS138 N沟道MOSFET 50V 220mA/0.22A SOT-23/SC-59 marking/标记 SS 高速开关/无二次击穿
|
||
BSS138
|
SHIKUES | 功能相似 | SOT-23-3 |
BSS138 N沟道MOSFET 50V 220mA/0.22A SOT-23/SC-59 marking/标记 SS 高速开关/无二次击穿
|
||
BSS138LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BSS138LT1G 晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 5 V, 1.5 V
|
||
BSS138LT3G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BSS138LT3G. 场效应管, MOSFET, N沟道, 50V, 200mA SOT-23, 整卷
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review