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Description ON SEMICONDUCTOR BSS138LT3G. 场效应管, MOSFET, N沟道, 50V, 200mA SOT-23, 整卷
Product QR code
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.3  yuan 0.3yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(9766) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

50.0 V

 

Technical parameters/rated current:

200 mA

 

Technical parameters/halogen-free state:

Halogen Free

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

5.6 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

225 mW

 

Technical parameters/threshold voltage:

500 mV

 

Technical parameters/Input capacitance:

50.0 pF

 

Technical parameters/drain source voltage (Vds):

50 V

 

Technical parameters/Leakage source breakdown voltage:

50.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

200 mA

 

Technical parameters/Input capacitance (Ciss):

50pF @25V(Vds)

 

Technical parameters/rated power (Max):

225 mW

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

225 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23-3

 

Dimensions/Length:

2.9 mm

 

Dimensions/Width:

1.3 mm

 

Dimensions/Height:

0.94 mm

 

Dimensions/Packaging:

SOT-23-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

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