Technical parameters/rated voltage (DC): | 100 V |
|
Technical parameters/rated current: | 17.0 A |
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Technical parameters/drain source resistance: | 100 mΩ (max) |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 3.80 W |
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Technical parameters/product series: | IRL530NS |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Leakage source breakdown voltage: | 100V (min) |
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Technical parameters/Continuous drain current (Ids): | 17.0 A |
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Technical parameters/rise time: | 53.0 ns |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263 |
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Dimensions/Packaging: | TO-263 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL530NSPBF
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRL530NSPBF 晶体管, MOSFET, N沟道, 17 A, 100 V, 100 mohm, 10 V, 2 V
|
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|
|
IFA | 功能相似 |
IRL530NSTRLPBF 编带
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|||
IRL530NSTRLPBF
|
Infineon | 功能相似 | TO-263-3 |
IRL530NSTRLPBF 编带
|
||
IRL530NSTRRPBF
|
International Rectifier | 功能相似 | TO-263-3 |
场效应管(MOSFET) IRL530NSTRRPBF D2PAK
|
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