Technical parameters/rated power: 3.8 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.1 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.8 W
Technical parameters/threshold voltage: 2 V
Technical parameters/input capacitance: 800 pF
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 17A
Technical parameters/rise time: 53 ns
Technical parameters/Input capacitance (Ciss): 800pF @25V(Vds)
Technical parameters/rated power (Max): 3.8 W
Technical parameters/descent time: 26 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/dissipated power (Max): 3.8W (Ta), 79W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF530NSTRLPBF
|
Infineon | 类似代替 | TO-263-3 |
INFINEON IRF530NSTRLPBF 晶体管, MOSFET, N沟道, 17 A, 100 V, 0.09 ohm, 10 V, 4 V
|
||
IRF530NSTRLPBF
|
IFC | 类似代替 |
INFINEON IRF530NSTRLPBF 晶体管, MOSFET, N沟道, 17 A, 100 V, 0.09 ohm, 10 V, 4 V
|
|||
IRF530NSTRLPBF
|
IFA | 类似代替 |
INFINEON IRF530NSTRLPBF 晶体管, MOSFET, N沟道, 17 A, 100 V, 0.09 ohm, 10 V, 4 V
|
|||
IRL530NSPBF
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON IRL530NSPBF 晶体管, MOSFET, N沟道, 17 A, 100 V, 100 mohm, 10 V, 2 V
|
||
IRL530NSTRRPBF
|
International Rectifier | 类似代替 | TO-263-3 |
场效应管(MOSFET) IRL530NSTRRPBF D2PAK
|
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