Technical parameters/Input capacitance: | 2015 pF |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/rise time: | 11 ns |
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Technical parameters/Input capacitance (Ciss): | 2015pF @50V(Vds) |
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Technical parameters/rated power (Max): | 2.5 W |
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Technical parameters/descent time: | 8 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2500 mW |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | QFN-56 |
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Dimensions/Length: | 5 mm |
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Dimensions/Packaging: | QFN-56 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSC196N10NS G
|
Infineon | 功能相似 | TDSON-8 |
INFINEON BSC196N10NS G 晶体管, MOSFET, N沟道, 45 A, 100 V, 16.7 mohm, 10 V, 3 V
|
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|
ON Semiconductor | 类似代替 | SOIC-8 |
100V N沟道PowerTrench MOSFET的 100V N-Channel PowerTrench MOSFET
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