Technical parameters/number of pins: | 6 |
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Technical parameters/drain source resistance: | 0.014 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2.4 W |
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Technical parameters/threshold voltage: | 2.1 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 9A |
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Technical parameters/rise time: | 2 ns |
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Technical parameters/Input capacitance (Ciss): | 760pF @15V(Vds) |
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Technical parameters/rated power (Max): | 900 mW |
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Technical parameters/descent time: | 2 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2.4W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | WDFN-6 |
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Dimensions/Packaging: | WDFN-6 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/06/15 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFHS8342TRPBF
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Infineon | 功能相似 | PQFN-8 |
INFINEON IRFHS8342TRPBF 晶体管, MOSFET, N沟道, 8.8 A, 30 V, 0.013 ohm, 10 V, 1.8 V 新
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