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Model FDG6304P
Description 场效应管, MOSFET, P沟道, -25V, -410mA, SC-70, 整卷
Product QR code
Brand: ON Semiconductor
Packaging SOT-363-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.25  yuan 1.25yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2259) Minimum order quantity(1)
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Technical parameters/number of pins:

6

 

Technical parameters/drain source resistance:

0.85 Ω

 

Technical parameters/dissipated power:

300 mW

 

Technical parameters/threshold voltage:

820 mV

 

Technical parameters/drain source voltage (Vds):

25 V

 

Technical parameters/rise time:

8 ns

 

Technical parameters/Input capacitance (Ciss):

62pF @10V(Vds)

 

Technical parameters/rated power (Max):

300 mW

 

Technical parameters/descent time:

35 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

300 mW

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

SOT-363-6

 

Dimensions/Packaging:

SOT-363-6

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDG6304P_NL FDG6304P_NL Fairchild 功能相似 SC-70
Dual P-Channel Digital FET
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