Technical parameters/polarity: | P-CH |
|
Technical parameters/drain source voltage (Vds): | 25 V |
|
Technical parameters/Continuous drain current (Ids): | 0.41A |
|
Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SC-70 |
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Dimensions/Packaging: | SC-70 |
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Other/Product Lifecycle: | Unknown |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDG6304P
|
ON Semiconductor | 功能相似 | SOT-363-6 |
FAIRCHILD SEMICONDUCTOR FDG6304P 双路场效应管, MOSFET, 双P沟道, -410 mA, -25 V, 0.85 ohm, -4.5 V, -820 mV
|
||
FDG6304P
|
Rochester | 功能相似 | SC-70 |
FAIRCHILD SEMICONDUCTOR FDG6304P 双路场效应管, MOSFET, 双P沟道, -410 mA, -25 V, 0.85 ohm, -4.5 V, -820 mV
|
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