Technical parameters/operating voltage: | 1.65V ~ 3.6V |
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Technical parameters/number of pins: | 8 |
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Technical parameters/clock frequency: | 85 MHz |
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Technical parameters/digits: | 8 |
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Technical parameters/access time (Max): | 7 ns |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/power supply voltage: | 1.65V ~ 3.6V |
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Technical parameters/power supply voltage (Max): | 3.6 V |
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Technical parameters/power supply voltage (Min): | 1.65 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5.05 mm |
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Dimensions/Width: | 3.99 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AT45DB041E-SHN-B
|
Adesto Technologies | 完全替代 | SOIC-8 |
ADESTO TECHNOLOGIES AT45DB041E-SHN-B 闪存, 串行, 4 Mbit, 2048 页 x 256字节, 85 MHz, SPI, SOIC, 8 引脚
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||
AT45DB041E-SHN-B
|
ETC2 | 完全替代 |
ADESTO TECHNOLOGIES AT45DB041E-SHN-B 闪存, 串行, 4 Mbit, 2048 页 x 256字节, 85 MHz, SPI, SOIC, 8 引脚
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|||
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ETC2 | 完全替代 |
Adesto ### 快闪存储器 闪存 IC 是非易失 RAM,必须按块写入/擦除。 它有限定的写入周期的次数,适用于不经常更改的程序存储。
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