Technical parameters/power supply voltage (DC): | 2.70V (min) |
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Technical parameters/number of pins: | 64 |
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Technical parameters/access time: | 90 ns |
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Technical parameters/memory capacity: | 16000000 B |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/power supply voltage: | 2.7V ~ 3.6V |
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Technical parameters/power supply voltage (Max): | 3.6 V |
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Technical parameters/power supply voltage (Min): | 2.7 V |
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Package parameters/number of pins: | 64 |
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Encapsulation parameters/Encapsulation: | FBGA-64 |
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Dimensions/Packaging: | FBGA-64 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
AMD | 功能相似 |
并联 NOR 闪存存储器,Cypress Semiconductor 高性能 快速随机访问和高带宽 ### 快闪存储器 闪存 IC 是非易失 RAM,必须按块写入/擦除。 它有限定的写入周期的次数,适用于不经常更改的程序存储。
|
|||
S29GL128P90FFIR10
|
Spansion | 功能相似 | BGA-64 |
并联 NOR 闪存存储器,Cypress Semiconductor 高性能 快速随机访问和高带宽 ### 快闪存储器 闪存 IC 是非易失 RAM,必须按块写入/擦除。 它有限定的写入周期的次数,适用于不经常更改的程序存储。
|
||
S29GL128P90FFIR10
|
Cypress Semiconductor | 功能相似 | BGA-64 |
并联 NOR 闪存存储器,Cypress Semiconductor 高性能 快速随机访问和高带宽 ### 快闪存储器 闪存 IC 是非易失 RAM,必须按块写入/擦除。 它有限定的写入周期的次数,适用于不经常更改的程序存储。
|
||
S29GL128P90FFIR13
|
Cypress Semiconductor | 完全替代 | BGA |
NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8Bit/16Bit 90ns 64Pin Fortified BGA T/R
|
||
S29GL128P90FFIR20
|
Cypress Semiconductor | 功能相似 | BGA-64 |
SPANSION S29GL128P90FFIR20 芯片, 闪存, 128MB, 90NS, 64-BGA
|
||
S29GL128P90FFIR20
|
AMD | 功能相似 |
SPANSION S29GL128P90FFIR20 芯片, 闪存, 128MB, 90NS, 64-BGA
|
|||
S29GL128P90FFIR22
|
Spansion | 完全替代 | LBGA |
NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 90ns 64Pin Fortified BGA T/R
|
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