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Model TC58NVG0S3EBAI4
Description Toshiba ### 快闪存储器 闪存 IC 是非易失 RAM，必须按块写入/擦除。 它有限定的写入周期的次数，适用于不经常更改的程序存储。
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Brand: Toshiba
Packaging BGA
Delivery time
Packaging method
Standard packaging quantity 1
39  yuan 39yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7715) Minimum order quantity(1)
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Technical parameters/operating temperature (Max):

85 ℃

 

Technical parameters/operating temperature (Min):

-40 ℃

 

Technical parameters/power supply voltage:

3.3 V

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

63

 

Encapsulation parameters/Encapsulation:

BGA

 

Dimensions/Length:

11 mm

 

Dimensions/Width:

9 mm

 

Dimensions/Height:

0.74 mm

 

Dimensions/Packaging:

BGA

 

Physical parameters/operating temperature:

-40℃ ~ 85℃

 

Other/Product Lifecycle:

Active

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Customs Information/Hong Kong Import and Export License:

NLR

 

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适配器型号: UHD-NAND-BG63A 支持的编程器: ALL-300G
适配器型号: DX5046 支持的编程器: SUPERPRO/6100N
适配器型号: DX5046 支持的编程器: SUPERPRO/6104N
适配器型号: GX5046 支持的编程器: SUPERPRO/7500
适配器型号: GX5046-T001-S4 支持的编程器: SUPERPRO/7500
适配器型号: GX5046 支持的编程器: SUPERPRO/7500N
适配器型号: GX5046-T001-S4 支持的编程器: SUPERPRO/7500N
适配器型号: GX5046 支持的编程器: SUPERPRO/7504N
适配器型号: GX5046-T001-S4 支持的编程器: SUPERPRO/7504N

Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NAND01GW3A2CZA1F NAND01GW3A2CZA1F ST Microelectronics 功能相似 BGA
128兆， 256兆， 512兆， 1千兆（ X8 / X16 ）， 528字节/字264页， 1.8V / 3V ， NAND闪存 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GW3B2BZA6F NAND01GW3B2BZA6F ST Microelectronics 类似代替 TFBGA
NAND Flash Parallel 3V/3.3V 1Gbit 128M x 8Bit 25us 63Pin VFBGA T/R

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