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Model NAND01GW3A2CZA1F
Description 128兆， 256兆， 512兆， 1千兆（ X8 / X16 ）， 528字节/字264页， 1.8V / 3V ， NAND闪存 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
Product QR code
Brand: ST Microelectronics
Packaging BGA
Delivery time
Packaging method
Standard packaging quantity 1
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Start batch production 20+ 50+ 100+ 300+ 500+
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7691) Minimum order quantity(20)
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Encapsulation parameters/Encapsulation:

BGA

 

Dimensions/Packaging:

BGA

 

Other/Product Lifecycle:

Unknown

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NAND01GW3B2BZA6F NAND01GW3B2BZA6F ST Microelectronics 功能相似 TFBGA
NAND Flash Parallel 3V/3.3V 1Gbit 128M x 8Bit 25us 63Pin VFBGA T/R
TC58NVG0S3EBAI4 TC58NVG0S3EBAI4 Toshiba 功能相似 BGA
Toshiba ### 快闪存储器 闪存 IC 是非易失 RAM，必须按块写入/擦除。 它有限定的写入周期的次数，适用于不经常更改的程序存储。

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