Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.0095 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 437.5 W |
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Technical parameters/threshold voltage: | 4 V |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Continuous drain current (Ids): | 110 A |
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Technical parameters/rise time: | 125 ns |
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Technical parameters/descent time: | 130 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263 |
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Dimensions/Packaging: | TO-263 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFS4310PBF
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Infineon | 功能相似 | TO-263-3 |
N 通道功率 MOSFET 超过 100A，Infineon ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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