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Model SI7846DP-T1-E3

Description VISHAY SI7846DP-T1-E3 场效应管, MOSFET, N沟道, 150V, 0.041Ω, 4A

Brand: Vishay Semiconductor

Packaging SOIC-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.041 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	1.9 W
Technical parameters/threshold voltage:	4.5 V
Technical parameters/drain source voltage (Vds):	150 V
Technical parameters/Leakage source breakdown voltage:	150 V
Technical parameters/breakdown voltage of gate source:	±20.0 V
Technical parameters/Continuous drain current (Ids):	6.70 A
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	1900 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Length:	5.99 mm
Dimensions/Width:	5.15 mm
Dimensions/Height:	1.04 mm
Dimensions/Packaging:	SOIC-8
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15

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