Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.036 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 5.2 W
Technical parameters/threshold voltage: 4.5 V
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/Continuous drain current (Ids): 26.0 A
Technical parameters/rise time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAKSO-8
External dimensions/length: 6.15 mm
External dimensions/width: 5.15 mm
External dimensions/height: 1.04 mm
External dimensions/packaging: PowerPAKSO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7430DP-T1-E3
|
Vishay Semiconductor | 完全替代 | SOIC |
MOSFET N-CH 150V 26A PPAK SO-8
|
||
SI7430DP-T1-E3
|
VISHAY | 完全替代 | PowerPAKSO-8 |
MOSFET N-CH 150V 26A PPAK SO-8
|
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