Technical parameters/drain source resistance: | 0.41 Ω |
|
Technical parameters/dissipated power: | 150 mW |
|
Technical parameters/threshold voltage: | 900 mV |
|
Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 150mW (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-416 |
|
Dimensions/Packaging: | SOT-416 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with standard/REACH SVHC version: | 2014/06/16 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1012CR-T1-GE3
|
Vishay Siliconix | 功能相似 | SC-75 |
MOSFET N-CH 20V 0.63A SC-75A
|
||
SI1012R-T1-E3
|
Vishay Siliconix | 功能相似 | SC-75 |
MOSFET N-CH 20V 500mA SC-75A
|
||
SI1012R-T1-E3
|
VISHAY | 功能相似 | SC-75-3 |
MOSFET N-CH 20V 500mA SC-75A
|
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