Technical parameters/drain source resistance: 0.33 Ω
Technical parameters/dissipated power: 240 mW
Technical parameters/threshold voltage: 400 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 43pF @10V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 240mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SC-75
External dimensions/packaging: SC-75
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1012R-T1-E3
|
Vishay Siliconix | 类似代替 | SC-75 |
MOSFET N-CH 20V 500mA SC-75A
|
||
SI1012R-T1-E3
|
VISHAY | 类似代替 | SC-75-3 |
MOSFET N-CH 20V 500mA SC-75A
|
||
|
|
VISHAY | 类似代替 | SC-75 |
MOSFET N-CH 20V 606mA SC75-3
|
||
SI1046R-T1-E3
|
Vishay Siliconix | 类似代替 | SC-75 |
MOSFET N-CH 20V 606mA SC75-3
|
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