Technical parameters/rated power: | 3.8 W |
|
Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.026 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 3.8 W |
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Technical parameters/threshold voltage: | 2 V |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Continuous drain current (Ids): | 55A |
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Technical parameters/rise time: | 100 ns |
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Technical parameters/Input capacitance (Ciss): | 3700pF @25V(Vds) |
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Technical parameters/rated power (Max): | 3.8 W |
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Technical parameters/descent time: | 55 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 3.8W (Ta), 200W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Length: | 10.67 mm |
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Dimensions/Width: | 9.65 mm |
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Dimensions/Height: | 4.83 mm |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRL2910STRL
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Infineon | 类似代替 | TO-263-3 |
D2PAK N-CH 100V 55A
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||
STB35NF10T4
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ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
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||
STB40NF10LT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB40NF10LT4 晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V
|
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